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QN10L16-VB
QN10L16-VB Datasheet N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100
0.0085 at VGS = 10 V
0.0105 at VGS = 4.5 V
ID (A) 85 70
FEATURES • Trench Power MOSFET • 1 00 % Rg Tested • 100 % UIS Tested
APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter
TO-252
D
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G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 125 °C
85
ID
75 a
A
Pulsed Drain Current
IDM
300
Avalanche Current Single Pulse Avalanche Energyb
IAS
75
L = 0.
QN10L16 Datasheet
