PNM523T201E0
FEATURES
- Trench power MOSFET
- 100 % Rg tested
APPLICATIONS
- Smart phones, tablet PC’s
- DC/DC converters
- Boost converters
- Load switch, OVP switch
S2
Top View S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS ID IDM IS
PD TJ, Tstg
LIMIT 20 ± 12 0.85 0.65
0.7 a, b 0.6 a, b
6 0.4 0.3 0.5 0.3 0.4 a, b 0.3 a, b -55 to +150 260
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State
Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state...
