• Part: LD024
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 948.16 KB
Download LD024 Datasheet PDF
VBsemi
LD024
FEATURES - Dynamic d V/dt Rating - For Automatic Insertion - End Stackable - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT HVMDIP N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor TA = 25 °C VGS at 10 V TA = 100 °C Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery d V/dtc TA = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 m H, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD  17 A, d I/dt  140 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm...