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K3148. For precise diagrams, and layout, please refer to the original PDF.
K3148-VB K3148-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.034 at VGS = 10 V ID (A) 50a FEATURES • TrenchFET® ...
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rDS(on) (Ω) 100 0.034 at VGS = 10 V ID (A) 50a FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters RoHS COMPLIANT TO-220 FULLPAK D GDS G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.