Full PDF Text Transcription for K2687-01 (Reference)
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K2687-01_05-VB K2687-01_05-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Con...
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DS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package TO-220AB 30 0.007 0.010 70 Single TO-220AB FEATURES • Trench power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D G GD S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
K2687-01 Datasheet
