• Part: K1905
  • Description: N-Channel 100V MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 1.10 MB
Download K1905 Datasheet PDF
VBsemi
K1905
FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - 175 °C Operating Temperature - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Ro HS PLIANT TO-220 FULLPAK GDS N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25...