K16J60W - N-Channel 600V MOSFET

VBsemi

Key Features

Reduced trr, Qrr, and IRRM.
Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Low switching losses due to reduced Qrr.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

K16J60W n-channel 600v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	K16J60W
Manufacturer	VBsemi
File Size	255.29 KB
Description	N-Channel 600V MOSFET
Datasheet	K16J60W Datasheet

Full PDF Text Transcription for K16J60W (Reference)

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K16J60W-VB www.VBsemi.com K16J60W-VB Datasheet N-Channel 600 V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Q...

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UMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 106 14 33 Single 0.

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