K12A60W - N-Channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS) Available D G S N-Channel MOSFET.

K12A60W n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	K12A60W
Manufacturer	VBsemi
File Size	265.68 KB
Description	N-Channel 650V Power MOSFET
Datasheet	K12A60W Datasheet

Full PDF Text Transcription for K12A60W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K12A60W. For precise diagrams, and layout, please refer to the original PDF.

K12A60W-VB K12A60W-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration ...

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(V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 109 0.

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