IRLD024PBF
FEATURES
- Dynamic d V/dt Rating
- For Automatic Insertion
- End Stackable
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to Ro HS Directive 2002/95/EC
Available
Ro HS-
PLIANT
HVMDIP
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
TA = 25 °C
VGS at 10 V
TA = 100 °C
Single Pulse Avalanche Energyb
Maximum Power Dissipation Peak Diode Recovery d V/dtc
TA = 25 °C
PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s
TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 m H, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 17 A, d I/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm...
