Click to expand full text
IRC540-VB
IRC540-VB Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration
100 0.036
55 Single
FEATURES
• Trench Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
D TO-220AB
G
GD S Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
IRC540 Datasheet
