HY5110W - N-Channel 100V MOSFET

VBsemi

Key Features

Trench Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg and UIS Tested D G S N-Channel MOSFET.

HY5110W n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	HY5110W
Manufacturer	VBsemi
File Size	224.27 KB
Description	N-Channel 100V MOSFET
Datasheet	HY5110W Datasheet

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HY5110W-VB HY5110W-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.002 320 Single TO-247AC S D G Top View FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.