Datasheet4U Logo Datasheet4U.com

HY4903B - N-Channel 30V MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Trench Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number HY4903B
Manufacturer VBsemi
File Size 226.83 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet HY4903B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY4903B N-Channel MOSFET HOOYI
HY4903B6 N-Channel Enhancement Mode MOSFET HOOYI
HY4903P N-Channel MOSFET HOOYI
HY4004A N-Channel MOSFET HOOYI
HY4004B N-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by VBsemi

Part Number Description

Full PDF Text Transcription

Click to expand full text
HY4903B-VB HY4903B-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0014 0.0016 260 Single D2PAK (TO-263) G D S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
Published: |