Datasheet4U Logo Datasheet4U.com

FY240 - N-Channel 200V MOSFET

Key Features

  • Trench Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Datasheet Details

Part number FY240
Manufacturer VBsemi
File Size 254.61 KB
Description N-Channel 200V MOSFET
Datasheet download datasheet FY240 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by VBsemi

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FY240-VB FY240-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.110 at VGS = 10 V TO-220AB ID (A) 30 FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch DRAIN connected to TAB GD S Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.