FPE50 - Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

FPE50 power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FPE50
Manufacturer	VBsemi
File Size	282.34 KB
Description	Power MOSFET
Datasheet	FPE50 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FPE500	GaAs Infrared Emitters	Fairchild Semiconductor
FPE510	GaAs Infrared Emitters	Fairchild Semiconductor
FPE520	GaAs Infrared Emitters	Fairchild Semiconductor
FPE530	GaAs Infrared Emitters	Fairchild Semiconductor
FPE104	GaAs Narrow Beam Infrared Emitter	Fairchild Semiconductor

Other Datasheets by VBsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FPE50-VB FPE50-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 ° C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 43 5 22 Single 0.