FB3004G
FEATURES
- Trench Power MOSFET
- 100 % Rg and UIS Tested
APPLICATIONS
- Synchronous Rectification
- Power Supplies
.VBsemi.
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current a
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
TC = 25 °C TC = 125 °C
L = 0.1 m H TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
LIMIT 40 ± 20 409 320 409 600 100 500 375 125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drain)
Notes a. Based on T = 25 °C. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material)
PCB mount c
SYMBOL Rth JA Rth JC
LIMIT 40 0.4
UNIT V
A m J W °C
UNIT °C/W
FB3004G-VB
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