D2210 - N-Channel 20V MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
PWM Optimized.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

D2210 n-channel 20v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	D2210
Manufacturer	VBsemi
File Size	253.32 KB
Description	N-Channel 20V MOSFET
Datasheet	D2210 Datasheet

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D2210-VB D2210-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.