B11NM60 - N-Channel 30V MOSFET

Features

Trench Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2011/65/EU.

VBsemi

Datasheet Details

Part number	B11NM60
Manufacturer	VBsemi
File Size	228.63 KB
Description	N-Channel 30V MOSFET
Datasheet	B11NM60 Datasheet
Additional preview pages of the B11NM60 datasheet.

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B11NM60-VB B11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, e 50 45 Qg (Typ) 25 nC D D2PAK (TO-263) G G D S FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.

Published: Apr 28, 2025 |