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65F6080 - Power MOSFET

Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS) TO-247AC S D G D G S N-Channel MOSFET.

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Datasheet Details

Part number 65F6080
Manufacturer VBsemi
File Size 277.01 KB
Description Power MOSFET
Datasheet download datasheet 65F6080 Datasheet

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Full PDF Text Transcription

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65F6080-VB 65F6080-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V 278 46 76 Single 0.
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