• Part: 2SJ505S
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 249.55 KB
Download 2SJ505S Datasheet PDF
VBsemi
2SJ505S
FEATURES - Trench FET® Power MOSFET - Package with Low Thermal Resistance - 100 % Rg Tested Available Ro HS- PLIANT TO-263 G DS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energyd IAS L = 0.1 m H Maximum Power Dissipation TC = 25 °C TA = 25 °Cb Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by Package. PCB Mountd Symbol Rth JA Rth JC - Pb containing terminations are not Ro HS pliant, exemptions may...