The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
052NE7N-VB TO262
052NE7N-VB TO262 Datasheet
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max. 0.0065 at VGS= 10 V
80
0.0070 at VGS =6.0 V
0.010 at VGS =4.5 V
TO-262
ID (A) 85a 80a 60a
Qg (Typ.) 17.1 nC
D
FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting
www.VBsemi.com
SS D G
Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
80
V
VGS
± 20
TC = 25 °C
85a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
65 28.6b, c
Pulsed Drain Current (t = 100 μs)
TA = 70 °C
24.
052NE7N Datasheet
