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UJ3N1701K2 - JFET

General Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

  • w Typical on-resistance RDS(on),typ of 1.1W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number UJ3N1701K2
Manufacturer UnitedSiC
File Size 281.14 KB
Description JFET
Datasheet download datasheet UJ3N1701K2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ3N1701K2 1700V-1.1W SiC Normally-on JFET Rev. A, February 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. Part Number UJ3N1701K2Z UJ3N1701K2 Package Die on tape Undiced wafer Features w Typical on-resistance RDS(on),typ of 1.