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UF3SC065040B7S - 650V SiC Cascode JFET

General Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Key Features

  • w Typical on-resistance RDS(on),typ of 42mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number UF3SC065040B7S Package D2PAK-7L Marking UF3SC065040B7S Typical.

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Datasheet Details

Part number UF3SC065040B7S
Manufacturer UnitedSiC
File Size 449.48 KB
Description 650V SiC Cascode JFET
Datasheet download datasheet UF3SC065040B7S Datasheet

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Full PDF Text Transcription (Reference)

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Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.