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4N70Z-E - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high Ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 4N70Z-E

Datasheet Details

Part number 4N70Z-E
Manufacturer Unisonic Technologies
File Size 202.30 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N70Z-E Datasheet
Additional preview pages of the 4N70Z-E datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60Z-E 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON)=2.5Ω @ VGS=10V, ID=2.
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