4N70 - 700V N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche.

Features

S.
RDS(ON) < 2.8Ω @VGS = 10 V.
Ultra Low Gate Charge ( Typical 15nC ).
Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ).
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-252 11 TO-251 TO-262.

Unisonic Technologies

📥 Download Datasheet

Datasheet Details

Part number	4N70
Manufacturer	Unisonic Technologies
File Size	269.19 KB
Description	700V N-CHANNEL POWER MOSFET
Datasheet	4N70 Datasheet
Additional preview pages of the 4N70 datasheet.

📁 Similar Datasheet

4N70 - N-Channel MOSFET Transistor (Inchange Semiconductor)
4N70-CB - N-CHANNEL MOSFET (UTC)
4N70-ML - N-CHANNEL POWER MOSFET (UTC)
4N70-TC4 - 700V N-CHANNEL POWER MOSFET (UTC)

Other Datasheets by Unisonic Technologies

4N70-C - N-CHANNEL POWER MOSFET
4N70-E - N-CHANNEL POWER MOSFET
4N70-R - N-CHANNEL POWER MOSFET
4N70-S - N-CHANNEL POWER MOSFET
4N70K - 700V N-CHANNEL POWER MOSFET
4N70Z-E - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.8Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.

Published: Nov 9, 2012 |