2N7002T
DESCRIPTION
The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- FEATURES
- High Density Cell Design for Low RDS(ON).
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Ordering Number
Package
2N7002TG-AN3-R
SOT-523
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 SGD
Packing Tape Reel
- MARKING
.unisonic..tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-542.C
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60 V
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60 V
Gate Source Voltage
Continuous Non Repetitive(tp<50μs)
VGSS
20 40
Drain Current
Continuous...
