The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD.
30V P-Channel Trench MOSFET(Preliminary)
General Description
Product Summary
Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V)
-30V -20A < 17mΩ < 30mΩ
DFN3.3x3.3
Part Number TTG20P03ATC
Package Type DFN3.3x3.3
Form Tape & Reel
Absolute Maximum Ratings (TA =25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current A
TC =25ºC TC =100ºC
Avalanche Current A
Single Pulse Avalanche Energy L =0.