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TTD85N03AT - 30V N-Channel Trench MOSFET

General Description

Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 85A < 4.5mΩ < 9mΩ Applications Synchronous Rectification in DC/DC and AC/DC Conv

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Datasheet Details

Part number TTD85N03AT
Manufacturer Unigroup
File Size 640.06 KB
Description 30V N-Channel Trench MOSFET
Datasheet download datasheet TTD85N03AT Datasheet

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TTD85N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 85A < 4.5mΩ < 9mΩ Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested TO-252 Part Number TTD85N03AT Package Type TO-252 Form Tape & Reel Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current A TC =25ºC TC =100ºC Avalanche Current A Single Pulse Avalanche Energy L =0.