90N03AT - 30V N-Channel Trench MOSFET

Features

Trench Power Technology.
Low RDS(ON).
Low Gate Charge.
Optimized for Fast-switching.

Unigroup

Datasheet Details

Part number	90N03AT
Manufacturer	Unigroup
File Size	399.76 KB
Description	30V N-Channel Trench MOSFET
Datasheet	90N03AT Datasheet
Additional preview pages of the 90N03AT datasheet.

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TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial DFN5x6 D D D D Product Summary VDS RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ID (at VGS=10V) 100% UIS Tested 30V < 5mΩ < 7mΩ 90A G S S S Device TTG90N03AT Package DFN5x6 Marking 90N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current B Pulsed Drain Current A TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche Energy L =0.

Published: Nov 3, 2024 |