Datasheet4U Logo Datasheet4U.com

UT25P03 - P-CHANNEL POWER MOSFET

General Description

The UTC UT25P03 The UTC UT25P02L is a P-channel power MOSFET using UTC’s advanced technology.

The advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

Key Features

  • RDS(ON) ≤ 52 mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 90 mΩ @ VGS=-4.5V, ID =-10A.
  • Low Capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain 1 TO-252 1.Gate 3.Source.

📥 Download Datasheet

Other Datasheets by Unisonic Technologies

Part Number Description
UT25P02L P-CHANNEL POWER MOSFET
UT25N04 N-CHANNEL MOSFET
UT25NP03 DUAL-CHANNEL POWER MOSFET
UT25NP04 DUAL ENHANCEMENT MODE Power MOSFET
UT20N03 N-CHANNEL MOSFET
UT20N04 N-CHANNEL POWER MOSFET
UT20NN04 40V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT20NP04 DUAL-CHANNEL POWER MOSFET
UT20NP06 DUAL-CHANNEL MOSFET
UT20P05 P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT25P03 -25A, -30V P-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT25P03 The UTC UT25P02L is a P-channel power MOSFET using UTC’s advanced technology. The advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.  FEATURES * RDS(ON) ≤ 52 mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 90 mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1 TO-252 1.Gate 3.