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UT20PP03 - P-CHANNEL POWER MOSFET

General Description

The UT20PP03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-10A.
  • RDS(ON) ≤ 27.5 mΩ @ VGS=-4.5V, ID=-10A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT20PP03 P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT20PP03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-10A * RDS(ON) ≤ 27.5 mΩ @ VGS=-4.5V, ID=-10A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT20PP03L-S08-R UT20PP03G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.