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UT150N06M - 60V N-CHANNEL POWER MOSFET

General Description

The UTC UT150N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 6 QW-R209-474.a UT150N06M Preliminary Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT150N06M Preliminary 150A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET  DESCRIPTION The UTC UT150N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UT150N06M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-474.