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UT03NN03Z - 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The UTC UT03NN03Z is a dual N-Channel enhancement mode power MOSFET, minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications, provides designer with fast switching speed, ruggedized device design, low o

Key Features

  • S.
  • RDS(ON) ≤ 1.2 Ω @ VGS=4.5V, ID=300mA RDS(ON) ≤ 1.6 Ω @ VGS=2.5V, ID=200mA RDS(ON) ≤ 3.0 Ω @ VGS=1.8V, ID=100mA RDS(ON) ≤ 5.0 Ω @ VGS=1.5V, ID=50mA.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • Specially Designed for Relay Driver, Speed Line Drive, etc.
  • Advanced Trench Process Technology.
  • SYMBOL D1 G2 S2 (6) (5) (4) Power MOSFET (1) (2) (3) S1 G1 D2.

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Other Datasheets by Unisonic Technologies

Part Number Description
UT03P06 P-CHANNEL POWER MOSFET
UT02N06VZ N-CHANNEL MOSFET
UT02P06 P-CHANNEL POWER MOSFET
UT06P03 P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT03NN03Z Preliminary 300mA, 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT03NN03Z is a dual N-Channel enhancement mode power MOSFET, minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications, provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * RDS(ON) ≤ 1.2 Ω @ VGS=4.5V, ID=300mA RDS(ON) ≤ 1.6 Ω @ VGS=2.5V, ID=200mA RDS(ON) ≤ 3.0 Ω @ VGS=1.8V, ID=100mA RDS(ON) ≤ 5.0 Ω @ VGS=1.5V, ID=50mA * Fast Switching Speed * Simple Drive Requirement * Specially Designed for Relay Driver, Speed Line Drive, etc.