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USC120R040B - 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET

General Description

SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time.

Key Features

  • S.
  • RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A.
  • High Blocking Voltage.
  • High Frequency Operation.
  • Low on-resistance.
  • Fast intrinsic diode with low reverse recovery.
  • 100% avalanche tested.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2025 Unisonic Technologies Co. , Ltd 1 of 10 QW-R209-510.B USC120R040B.

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UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET  DESCRIPTION SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time. It is widely used in electric vehicle charger, industrial equipment power supply, efficient power regulator inverter and rectification part and other uses.  FEATURES * RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A * High Blocking Voltage * High Frequency Operation * Low on-resistance * Fast intrinsic diode with low reverse recovery * 100% avalanche tested  SYMBOL Power MOSFET www.unisonic.com.