UND02R100L - N-CHANNEL MOSFET

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UTC

UND02R100L N-CHANNEL MOSFET by UTC - Datasheet Preview — Datasheet preview – UND02R100L

Datasheet Details

Part number	UND02R100L
Manufacturer	UTC
File Size	206.40 KB
Description	N-CHANNEL MOSFET
Datasheet	UND02R100L Datasheet
Additional preview pages of the UND02R100L datasheet.

Product details

Description

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Features

RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A.
High Cell Density Trench Technology.
High Power and Current Handling Capability.
SYMBOL.

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Published: Apr 20, 2020 |