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MMDT8150 - LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The UTC MMDT8150 is a Dual NPN epitaxial planar transistor.

It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference.

Key Features

  • ES.
  • Low VCE(SAT), VCE(SAT)=40mV (typ. )@IC / IB = 50mA / 2.5mA.
  • Transistor elements are independent to eliminate interference.
  • Mounting cost and area can be cut in half.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. „ FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate interference. * Mounting cost and area can be cut in half.