D1875
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
- High breakdown voltage.(BVCEO=120V)
- Low collector output capacitance.(Typ.20p F at VCB=10V)
- High transition frequency.(f T=80MHz)
- ORDERING INFORMATION
Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk
Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R TO-92 2SD1875L-x-T9N-B 2SD1875G-x-T9N-B TO-92NL 2SD1875L-x-T9N-K 2SD1875G-x-T9N-K TO-92NL Note: Pin Assignment E: EMITTER C: COLLECTOR B: BASE
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QW-R201-057,D
Free Datasheet http://.datasheet-pdf./
2SD1857
- PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector power dissipation Collector current Collector current SYMBOL VCBO VCEO VEBO PC IC ICP
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless...
