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4N50-MHD - N-CHANNEL POWER MOSFET

Description

The UTC 4N50-MHD is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 4N50-MHD

Datasheet Details

Part number 4N50-MHD
Manufacturer UTC
File Size 211.33 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N50-MHD Datasheet
Additional preview pages of the 4N50-MHD datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N50-MHD Preliminary 4.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N50-MHD is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=2.
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