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PZP103BYB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3Ω @VGS = 4V
ID 0.3A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
0.3 0.2 3
Avalanche Current
IAS 1.2
Avalanche Energy
L = 1mH EAS 0.8
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.5 0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL MAXIMUM UNITS 220 °C / W
Ver 1.
PZP103BYB Datasheet
