Click to expand full text
PK676BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 2.2mΩ @VGS = 10V
ID 111A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
111 70 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
24 19
Avalanche Current
IAS 69
Avalanche Energy
L =0.1mH
EAS
238
Power Dissipation
TC = 25 °C TC = 100 °C
PD
54 21
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.6 1.
PK676BA Datasheet
