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PK615BMA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
2.6Ω @VGS = 10V
ID 0.45A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
0.45 0.3 2.2
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.9 0.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1 limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 130 °C / W
Ver 1.
PK615BMA Datasheet
