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PK5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
6mΩ @VGS = 10V
52A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current
TC = 25 °C TC = 100 °C
ID
IDM
TA = 25 °C TA= 70 °C
ID
52 33 120
A 19 15
Avalanche Current
IAS
33
Avalanche Energy
L =0.1mH
EAS
54
mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 W
12.5
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4 W
2.
PK5E6BA Datasheet
