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PK5C8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
2.4mΩ @VGS = 10V
82A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
82 52
IDM
150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
21 17
Avalanche Current
IAS
58
Avalanche Energy
L =0.1mH
EAS
168
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.
PK5C8EA Datasheet
