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PK5B3BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
8mΩ @VGS = -10V
ID -74A
PDFN 5x6P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS
-40
VGS
±25
TC = 25 °C
-74
Continuous Drain Current4
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C
ID
TA = 70 °C
IDM
IAS
-46 -12 -9.6 -100 -49.8
Avalanche Energy
L = 0.1mH
EAS
124
TC = 25 °C
83
Power Dissipation3
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
33 2.2 1.4 -55 to 150
UNITS V
A
mJ W °C
REV1.
PK5B3BA Datasheet
