Datasheet4U Logo Datasheet4U.com

PI632BZ - MOSFET

📥 Download Datasheet

Datasheet preview – PI632BZ

Datasheet Details

Part number PI632BZ
Manufacturer UNIKC
File Size 387.37 KB
Description MOSFET
Datasheet download datasheet PI632BZ Datasheet
Additional preview pages of the PI632BZ datasheet.
Other Datasheets by UNIKC

Full PDF Text Transcription

Click to expand full text
PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID 105A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 105 66 200 Avalanche Current IAS 40.8 Avalanche Energy L = 0.1mH EAS 83 Power Dissipation TC = 25 °C TC = 100 °C PD 74 29 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A.
Published: |