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PB600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 9A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID IDM
9 7.2 27
Avalanche Current
IAS 12.6
Avalanche Energy
L = 0.1 mH
EAS
7.9
Power Dissipation
TA= 25 °C TA= 70°C
PD
1.7 1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
PB600BA Datasheet
