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P6803HVG - Dual N-Channel MOSFET

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Part number P6803HVG
Manufacturer UNIKC
File Size 478.65 KB
Description Dual N-Channel MOSFET
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    P6803HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V ID 4.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 4.5 3.6 20 Power Dissipation TA = 25 °C TA= 70°C PD 2 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W REV 1.
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