Click to expand full text
P5103EMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID -3.8A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-3.8 -3 -20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1 0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Steady State
RqJA
117
Junction-to-Lead
Steady State
RqJC
60
1Pulse width limited by maximum junction temperature.
P5103EMG Datasheet
