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P5103EAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID -5A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage Drain-Gate Voltage (RGS=20KΩ）
VGS ±20 VDG -30
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-5 -4.2 -20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.0 1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t≦5sec
Junction-to-Ambient
Steady State
Junction-to-Lead
Steady State
1Pulse width limited by maximum junction temperature.
P5103EAG Datasheet
