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P50N03LTG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
25V
10mΩ @VGS = 10V
60A
TO-220
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
60 38
IDM
150
Avalanche Current
IAS
36
Avalanche Energy
L = 0.1mH
EAS
65
Power Dissipation
TC = 25 °C
PD
52
TC = 100 °C
21
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.4 50
UNITS °C / W
REV 1.
P50N03LTG Datasheet
