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P0690ATF / P0690ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
900V
2.35Ω @VGS = 10V
ID 6A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 900
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM EAS
6 3.5 18 45
Power Dissipation
TC = 25 °C TC = 100 °C
PD
52 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.
P0690ATFS Datasheet
